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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3326 PACKAGE Isolated TO-220
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
* Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) * Gate voltage rating : 30 V * Low on-state resistance : RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A) * Avalanche capability ratings * Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg
500 30 10 40 40 2.0 150 -55 to +150 10 10.7
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14204EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan
(c)
2000
2SK3326
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V, di/dt = 50 A / s VDD = 400 V, VGS = 10 V, ID = 10 A VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V, RG = 10 , RL = 60 TEST CONDITIONS VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz 2.5 2.0 4.0 0.68 1200 190 10 21 11 40 9.5 22 6.5 7.5 1.0 0.5 2.6 0.85 MIN. TYP. MAX. 100 100 3.5 UNIT
A
nA V S pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D14204EJ1V0DS00
2SK3326
TYPICAL CHARACTERISTICS(TA = 25 C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - %
50 Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
80
40
60 40
30
20
20
10
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Figure3. FORWARD BIAS SAFE OPERATING AREA 100
d ite ) im 0 V )L 1 (on S = S RD t VG (a
Tc - Case Temperature - C
Figure4. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed
ID (pulse) P
10
W
=
ID - Drain Current - A
10
10
ID (DC)
0
1m
Po
10
s
ID - Drain Current - A
s
VGS = 20 V 10 V 8.0 V 10
s
we
1
rD
10
iss
m
0
s
m
ip
s
n Li m
at
io
VGS = 6.0 V
0.1 1
Tc = 25 C Single Pulse 10
ite
d
100
1000
VDS - Drain to Source Voltage - V
Figure5. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 10 Pulsed
0
4
8
12
16
VDS - Drain to Source Voltage - V
ID - Drain Current - A
1 0.1 0.01 TA = -25 C 25 C 75 C 125 C
0.001 0.0001 0 5 10 15 VGS - Gate to Source Voltage - V
Data Sheet D14204EJ1V0DS00
3
2SK3326
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth (t) - Transient Thermal Resistance - C/W
100 Rth(ch-A) = 62.5 C/W
10 Rth(ch-C) = 3.2 C/W
1
0.1 Tc = 25 C Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000
PW - Pulse Width - s
Figure7. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0
IyfsI - Forward Transfer Admittance - S
10
1 TA = -25 C 25 C 75 C 125 C 0.1
RDS(on) - Drain to Source On-state Resistance -
1.0
ID = 10 A 5.0 A 2.0 A
0.01 0.01
VDS = 10 V Pulsed 0.1 1 ID - Drain Current - A 10 100
0.0
Pulsed 0 5 10 15 20 25 VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance -
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cut-off Voltage - V
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = 10 V ID = 1 mA 3.0
3.0
Pulsed
2.0
2.0
1.0
1.0
0 0.1
0.0
-50 0 50 100 150 200
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14204EJ1V0DS00
2SK3326
RDS(on) - Drain to Source On-state Resistance -
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3.0
Figure12. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
ISD - Diode Forward Current - A
Pulsed
10
2.0 ID = 10 A
1
VGS = 10 V VGS = 0 V
1.0
ID = 5.0 A
0.1
0.0 -50
VGS = 10 V 0 50 100 150 Tch - Channel Temperature - C
0.01 0.0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
Figure14. SWITCHING CHARACTERISTICS 1000
Figure13. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1.0 MHz
td(on), tr, td(off), tf - Switching Time - ns
10000
Ciss, Coss, Crss - Capacitance - pF
tr tf
Ciss 1000 Coss 100
100 td(on) td(off) 10 VDD = 150 V VGS = 10 V RG = 10 0.1 1 10 ID - Drain Current - A 100
10 Crss 1
1
0.1 1 10 100 1000 VDS - Drain to Source Voltage - V
Figure15. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 900
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 50 A/s VGS = 0 V
700 600 500 400 300 200 100 0 5 VDS VDD = 400 V 250 V 100 V
14 12 VGS 10 8 6 4 2 15 20 0 25
800 700 600 500 400 300 200 100 0 0.1 1 10 100 IF - Drain Current - A
10
QG - Gate Charge - nC
Data Sheet D14204EJ1V0DS00
VGS - Gate to Source Voltage - V
ID = 10 A
5
2SK3326
Figure17. SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 16 ID(peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V EAS = 10.7 mJ 10 8 6 4 2 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C
Figure18. SINGLE AVALANCHE ENERGY vs INDUCTIVE LOAD 100
IAS - Single Avalanche Energy - A
EAS - Single Avalanche Energy - mJ
14 12
RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25 C IAS = 10 A
EAS = 10
10
.7 m
J
1
0.1 10
100
1m
10 m
L - Inductive Load - H
6
Data Sheet D14204EJ1V0DS00
2SK3326
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
10.00.3 4.50.2 3.20.2 2.70.2
15.00.3
30.1
12.00.2
EQUIVALENT CIRCUIT
Drain
40.2
13.5 MIN.
Gate
Body Diode
0.70.1 2.54
1.30.2 1.50.2 2.54
2.50.1 0.650.1
Source
1. Gate 2. Drain 3. Source 123
Remark
Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D14204EJ1V0DS00
7
2SK3326
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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